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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD113 description collector-emitter breakdown voltage- : v (br)ceo = 80v (min) high power dissipation high current capability applications audio power amplifier, pow er switching applications. dc-dc converter and regulator applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 10 v i c collector current-continuous 30 a i e emitter current-continuous -30 a i b b base current-continuous 5 a p c collector power dissipation @t c =25 200 w t j junction temperature 150 t stg storage temperature range -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD113 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; r be = 80 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 10 v v ce (sat) collector-emitter saturation voltage i c = 15a; i b = 3a 1.5 v v be (sat) base-emitter saturation voltage i c = 15a; i b = 3a 2.5 v i cbo collector cutoff current v cb = 50v; i e = 0 2 ma i ebo emitter cutoff current v eb = 10v; i c = 0 50 ma h fe-1 dc current gain i c = 1a; v ce = 5v 50 300 h fe-2 dc current gain i c = 15a; v ce = 5v 10 c ob output capacitance i e = 0; v cb = 50v; f test = 1.0mhz 400 pf f t current-gain?bandwidth product i c = 1a; v ce = 10v 1.5 mhz ? h fe-1 classifications o y 50-150 100-300 isc website www.iscsemi.cn |
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